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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA679TB N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The PA679TB is a switching device, which can be driven directly by a 2.5 V power source. The PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES * 2.5 V drive available * Low on-state resistance N-ch RDS(on)1 = 0.57 MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)3 = 0.88 MAX. (VGS = 2.5 V, ID = 0.15 A) P-ch RDS(on)1 = 1.45 MAX. (VGS = -4.5 V, ID = -0.20 A) RDS(on)3 = 2.98 MAX. (VGS = -2.5 V, ID = -0.15 A) * Two MOS FET circuits in same size package as SC-70 PACKAGE DRAWING (Unit: mm) 0.2 -0 +0.1 0.15 -0.05 +0.1 1.25 0.1 2.1 0.1 6 5 4 0 to 0.1 ORDERING INFORMATION PART NUMBER PACKAGE SC-88 (SSP) 1 2 3 0.7 0.9 0.1 0.65 0.65 PA679TB Marking: YA 1.3 2.0 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 / -20 12 / m12 0.35 / m0.25 1.40 / m1.00 0.2 150 -55 to +150 V V A A W C C PIN CONNECTION (Top View) 6 5 4 Total Power Dissipation (2 units) Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on FR-4 board of 2500 mm x 1.1 mm 1. 2. 3. 4. 5. 6. 1 2 3 Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with caution for electrostatic discharge. VESD = 100 V TYP. (C = 200 pF, R = 0 , Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16615EJ1V0DS00 (1st edition) Date Published February 2003 NS CP(K) Printed in Japan 2003 PA679TB ELECTRICAL CHARACTERISTICS (1) N-ch PART (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 TEST CONDITIONS VDS = 20.0 V, VGS = 0 V VGS = 12.0 V, VDS = 0 V VDS = 10.0 V, ID = 1.0 mA VDS = 10.0 V, ID = 0.30 A VGS = 4.5 V, ID = 0.30 A VGS = 4.0 V, ID = 0.30 A VGS = 2.5 V, ID = 0.15 A VDS = 10.0 V VGS = 0 V f = 1.0 MHz VDD = 10.0 V, ID = 0.30 A VGS = 4.0 V RG = 10 MIN. TYP. MAX. 1.0 UNIT A A V S 10 0.50 0.25 1.00 0.75 0.38 0.41 0.60 28 11 7 20 51 94 87 0.57 0.60 0.88 1.50 Forward Transfer Admittance Drain to Source On-state Resistance pF pF pF ns ns ns ns V Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf VF(S-D) IF = 0.35 A, VGS = 0 V 0.84 Note Pulsed: PW 350 s, Duty cycle 2% TEST CIRCUIT SWITCHING TIME D.U.T. RL VGS PG. RG Wave Form VGS 0 10% VGS 90% VDD VDS 90% 90% 10% 10% VGS 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G16615EJ1V0DS PA679TB (2) P-ch PART (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 TEST CONDITIONS VDS = -20.0 V, VGS = 0 V VGS = m12.0 V, VDS = 0 V VDS = -10.0 V, ID = -1.0 mA VDS = -10.0 V, ID = -0.20 A VGS = -4.5 V, ID = -0.20 A VGS = -4.0 V, ID = -0.20 A VGS = -2.5 V, ID = -0.15 A VDS = -10.0 V VGS = 0 V f = 1.0 MHz VDD = -10.0 V, ID = -0.20 A VGS = -4.0 V RG = 10 MIN. TYP. MAX. -1.0 m10 UNIT A A V S -0.80 0.2 -1.30 0.6 1.17 1.25 2.25 29 15 3 23 39 50 33 -1.80 Forward Transfer Admittance Drain to Source On-state Resistance 1.45 1.55 2.98 pF pF pF ns ns ns ns V Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf VF(S-D) IF = 0.25 A, VGS = 0 V 0.88 Note Pulsed: PW 350 s, Duty cycle 2% TEST CIRCUIT SWITCHING TIME D.U.T. RL VGS PG. RG Wave Form VGS(-) 0 10% VGS 90% VDD VDS(-) 90% 90% 10% 10% VGS(-) 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Data Sheet G16615EJ1V0DS 3 PA679TB TYPICAL CHARACTERISTICS (1) N-ch PART (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.24 PT - Total Power Dissipation - W 0.2 0.16 0.12 0.08 0.04 0 0 25 50 Mounted on FR-4 board of 2 2500 m m x 1.1 m m 2 units total 75 100 125 150 175 TA - Ambient Temperature - C TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1.4 1.2 Pulsed FORWARD TRANSFER CHARACTERISTICS 10 ID - Drain Current - A 1 0.8 0.6 0.4 0.2 0 0 0.4 0.8 ID - Drain Current - A VGS = 4.5 V 4.0 V 2.5 V VDS = 10.0 V Pulsed 1 0.1 0.01 0.001 0.0001 TA = 125C 75C 25C -25C 1.2 1.6 0 0.5 1 1.5 2 2.5 3 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.4 VDS = 10.0 V ID = 1.0 m A 1.2 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 10 VDS = 10.0 V Pulsed TA = -25C 25C 75C 125C VGS(off) - Gate Cut-off Voltage - V 1 1 0.8 0.1 0.6 0.4 - 50 0 50 100 150 0.01 0.001 0.01 0.1 1 10 Tch - Channel Temperature - C ID - Drain Current - A 4 Data Sheet G16615EJ1V0DS PA679TB RDS(on) - Drain to Source On-state Resistance - 1.2 1 VGS = 2.5 V, ID = 0.15 A 0.8 0.6 0.4 0.2 0 - 50 RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.2 1 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 ID = 0.30 A Pulsed VGS = 4.0 V, ID = 0.30 A VGS = 4.5 V, ID = 0.30 A 0 50 100 150 Tch - Channel Temperature - C VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 4.5 V Pulsed TA = 125C 75C 25C -25C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - 1.2 1 0.8 0.6 0.4 0.2 0 0.01 TA = 125C 75C 25C -25C VGS = 4.0 V Pulsed 1.2 1 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 0.1 1 10 ID - Drain Current - A ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - 1.2 1 0.8 0.6 0.4 0.2 0 0.01 25C -25C VGS = 2.5 V Pulsed 0.1 1 10 TA = 125C 75C 100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V f = 1.0 MHz C iss Ciss, Coss, Crss - Capacitance - pF 10 C oss C rss 1 0.1 1 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V Data Sheet G16615EJ1V0DS 5 PA679TB SWITCHING CHARACTERISTICS 1000 10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = 0 V Pulsed td(on), tr, td(off), tf - Switching Time - ns IF - Diode Forward Current - A VDD = 10.0 V VGS = 4.0 V RG = 10 1 td(off) 100 tf tr 0.1 0.01 td(on) 10 0.01 0.001 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 ID - Drain Current - A VF(S-D) - Source to Drain Voltage - V 6 Data Sheet G16615EJ1V0DS PA679TB (2) P-ch PART (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.24 PT - Total Power Dissipation - W 0.2 0.16 0.12 0.08 0.04 0 0 25 50 Mounted on FR-4 board of 2 2500 m m x 1.1 m m 2 units total 75 100 125 150 175 TA - Ambient Temperature - C TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -1 Pulsed FORWARD TRANSFER CHARACTERISTICS -10 -1 -0.1 -0.01 -0.001 -0.0001 TA = 125C 75C 25C -25C VDS = -10.0 V Pulsed ID - Drain Current - A VGS = -4.5 V - 0.6 -4.0 V - 0.4 -2.5 V - 0.2 0 0 - 0.4 - 0.8 - 1.2 - 1.6 -2 ID - Drain Current - A - 0.8 0 -1 -2 -3 -4 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE - 1.6 VDS = -10.0 V ID = -1.0 m A FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 10 VDS = -10.0 V Pulsed 1 TA = -25C 25C 75C 125C VGS(off) - Gate Cut-off Voltage - V - 1.4 - 1.2 -1 0.1 - 0.8 - 0.6 -50 0 50 100 150 0.01 - 0.001 - 0.01 - 0.1 -1 - 10 Tch - Channel Temperature - C ID - Drain Current - A Data Sheet G16615EJ1V0DS 7 PA679TB RDS(on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed 3 VGS = -2.5 V, ID = -0.15 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 4 ID = -0.20 A Pulsed 3 2 2 1 1 VGS = -4.0 V, ID = -0.20 A VGS = -4.5 V, ID = -0.20 A -50 0 50 100 150 0 0 0 -2 -4 -6 -8 - 10 - 12 Tch - Channel Temperature - C VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = -4.5 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - 4 VGS = -4.0 V Pulsed 3 TA = 125C 2 75C 25C 1 -25C 4 3 2 TA = 125C 75C 25C -25C 1 0 - 0.01 - 0.1 -1 - 10 0 - 0.01 - 0.1 -1 - 10 ID - Drain Current - A ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - 4 TA = 125C 75C 25C -25C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 VGS = 0 V f = 1.0 MHz C iss C oss 3 2 Ciss, Coss, Crss - Capacitance - pF 10 1 VGS = -2.5 V Pulsed 0 - 0.01 - 0.1 -1 - 10 C rss 1 - 0.1 -1 - 10 - 100 ID - Drain Current - A VDS - Drain to Source Voltage - V 8 Data Sheet G16615EJ1V0DS PA679TB SWITCHING CHARACTERISTICS 1000 10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = 0 V Pulsed 1 td(on), tr, td(off), tf - Switching Time - ns IF - Diode Forward Current - A VDD = -10.0 V VGS = -4.0 V R G = 10 100 td(off) tr tf td(on) 10 -0.01 0.1 0.01 0.001 -0.1 -1 -10 0.4 0.6 0.8 1 1.2 1.4 ID - Drain Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet G16615EJ1V0DS 9 PA679TB * The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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